學習如何掌控奈米尺度下接點電阻對半導體元件的影響，對於發展奈米元件至關重要。林彥甫教授與交通大學電子物理學系簡紋濱教授共同合作，利用磷化銦奈米線製作出多組單根納米線元件，透過有系統的變化直流電學的量測與分析，成功地將奈米線(Nanowire dominated)與接點電阻(Contact dominated)所主導的奈米元件區分開。在這個研究基礎下，更進一步地發現Mott變程跳躍傳輸模型所論述的無序(disorder)系統於奈米線電子元件介面處扮演著相當重要的環節。此新穎研究成果打破一般對於元件靈敏度好壞，皆由材料本身特性所決定的刻板印象。此成果已於2015年八月發表於Nature子期刊Sci. Rep. 5, 12035。
The semiconductor industries continuously scale down the devices and suffer the difficulties of high resistances due to ultra-small contacts. In our previous report [refer to Nano Lett. (2008) 8, 3146], it was pointed that the shrinkage of contact areas multiplies the contact resistances up to two or three orders of magnitudes thus the nanocontact shall always be an important issue for nanoelectronic fabrications and developments.
Very recently nanoelectronics with poor nanocontacts resulting in an enhancement of photoresponse has broken mainstream intuition and gained a lot of attentions. Such an enhancement is mainly ascribed to the existence of Schottky barrier heights. However, the physics and transport mechanisms in the nanocntact have rarely been investigated and reported yet. In our work, we reported the study of nanocontact (NC) disorder in common semiconductor NW devices and elaborately examined the influence of the disorder effect in light- and gas-sensing properties of nanoelectronics.
Undergraduate, MS, PhD students and postdoc who are interested in our researches are welcome to join us. Please contact Dr. Lin Yen-Fu through Email: firstname.lastname@example.org; (Lin Research Group: http://linyf.nchu.edu.tw/)